BDX18_12 Datasheet, PDF (1/3 Pages) Comset Semiconductor – PNP SILICON TRANSISTOR EPITAXIAL BASE

BDX18 – BDX18N
PNP SILICON TRANSISTOR EPITAXIAL BASE
LF Large Signal Power Amplification
High Current Switching
Thermal Fatigue Inspection
Compliance to RoHS
Applications :
•
•
•
•
Series and shunt regulators
High Fidelity Amplifiers
Power-switching circuits
Solenoid drivers
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
V_CEO
V_CER
V_EBO
V_CBO
V_CEX
I_C
I_B
P_T
T_J
T_S
Collector-Emitter Voltage
Collector-Emitter
Voltage
R_BE=100Ω
Collector-Emitter Voltage
Emitter-Base Voltage
Collector-Emitter
Voltage
Collector Current
V_BE=+1.5 V
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
@ T_C = 25°
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
Value
-60
-70
-65
-7
-100
-70
-90
-70
-15
-7
117
-65 to +200
Unit
V
V
V
V
V
A
A
W
°C
05/10/2012
COMSET SEMICONDUCTORS
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