2N3866 Datasheet, PDF (2/2 Pages) NXP Semiconductors – Silicon planar epitaxial overlay transistors

NPN 2N3866
Symbol
Ratings
f_T
Transition Frequency
C_CBO
Collector-Base Capacitance
P_{O (**)}
Output Power
η _(**)
Collector Efficiency
(*) Pulse conditions : tp < 300 µs, δ =1%.
(**) See test circuit.
MECHANICAL DATA CASE TO-39
DIMENSIONS
mm
A
6,25
B
13,59
C
9,24
D
8,24
E
0,78
F
1,05
G
0,42
H
45°
L
4,1
Test Condition(s) Min
I_C=50 mA, V_CE=15 V
f= 200MHz
500
I_E= 0 ,V_CB= -28 V
f = 1MHz
-
V_CC= -28V
P_i =100 mW
1
f = 400 MHz
V_CC= -28V ,P_o =1 W
f = 400 MHz
45
Typ Max Unit
-
- MHz
-
3 pF
-
- pF
-
- ps
Pin 1 :
Pin 2 :
Pin 3 :
Case :
Emitter
Base
Collector
Collector
Revised August 2012
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use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and
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components in life support devices or systems.
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11/09/2012
COMSET SEMICONDUCTORS
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