2N3866 Datasheet, PDF (1/2 Pages) NXP Semiconductors – Silicon planar epitaxial overlay transistors

NPN 2N3866
SILICON PLANAR EPITAXIAL TRANSISTORS
The 2N3866 are NPN transistors mounted in TO-39 metal package with the collector
connected to the case .
They are intended for VHF-UHF class A, B or C amplifier circuits and oscillator applications.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
V_CEO
V_CES
V_EBO
I_C
P_D
T_J
T_Stg
Ratings
Collector-Emitter Voltage
Collector-Emitter Voltage (V_BE = 0)
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
@ T_case= 25°
Storage Temperature range
Value
30
55
3.5
0.5
5
200
-65 to +200
Unit
V
V
V
A
Watts
°C
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
R_thJ-c
Thermal Resistance, Junction-case
Value
35
Unit
°C/ W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
I_CEO
V_CEO (*)
V_CES
V_EBO
h_FE (*)
V_CE(SAT) (*)
Ratings
Test Condition(s) Min
Collector Cutoff Current
V_CE=28 V, I_B=0
-
Collector Emitter Sustaining
Voltage
I_C=5 mA, I_B=0
30
Collector Base Breakdown Voltage I_C=100 µA, V_BE=0
55
Emitter Base Breakdown Voltage I_E=100 µA, I_C=0
3.5
DC Current Gain
I_C=50 mA, V_CE=5 V 10
I_C=360 mA, V_CE=5 V 5
Collector-Emitter saturation
Voltage
I_C=100 mA
I_B=20 mA
-
Typ Max Unit
- 20 µA
-
-
V
-
-
V
-
-
V
-
-
200
-
-
-
1
V
COMSET SEMICONDUCTORS
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