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| 2N3713_12 Datasheet, PDF (2/4 Pages) Comset Semiconductor – EPITAXIAL-BASE TRANSISTORS | |||
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NPN 2N3713 â 2N3714 â 2N3715 â 2N3716
ELETRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
VCEO(BR)
Collector-Emitter
Breakdown Voltage
IC=200 mA, IB=0 (*)
2N3713
2N3715
60
2N3714
2N3716
80
VCEO(SUS)
Collector-Emitter
Sustaining Voltage (*)
IC=200 mA, IB=0 (*)
2N3713
2N3715
60
2N3714
2N3716
80
ICEO
Collector-Emitter
Current
VCE=30 V, IB=0
VCE=40 V, IB=0
2N3713
2N3715
-
2N3714
2N3716
-
VCE=80 V, VEB=-1.5 V
2N3713
2N3715
-
VCE=100 V, VEB=-1.5 V
2N3714
2N3716
-
ICEV
Collector Cutoff Current VCE=60 V, VEB=-1.5 V 2N3713
TC = 150°C
2N3715
-
VCE=80 V, VEB=-1.5 V 2N3714
TC = 150°C
2N3716
-
2N3713
IEBO
Emitter Cutoff Current VBE=7 V, IC=0
2N3714
2N3715
-
2N3716
IC=1 A, VCE=2 V
2N3713
2N3714
25
2N3715
2N3716
50
hFE
DC Current Gain (*) (**) IC=3 A, VCE=2 V
2N3713
2N3714
15
2N3715
2N3716
30
2N3713
IC=10 A, VCE=4 V
2N3714
2N3715
5
2N3716
VCE(SAT)
Collector-Emitter
saturation Voltage (*)
(**)
IC=5 A, IB=0.5 A
2N3713
2N3714
-
2N3715
2N3716
-
-
-
V
-
-
-
-
V
-
-
- 0.7
mA
- 0.7
-
1
-
1
mA
- 10
- 10
-
5 mA
- 90
- 150
-
-
-
-
-
-
-
-
1
V
- 0.8
05/11/2012
COMSET SEMICONDUCTORS
2|4
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