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| 2N3713_12 Datasheet, PDF (1/4 Pages) Comset Semiconductor – EPITAXIAL-BASE TRANSISTORS | |||
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NPN 2N3713 â 2N3714 â 2N3715 â 2N3716
EPITAXIAL-BASE TRANSISTORS
The 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in
Jedec TO-3 metal case. They are inteded for use in power linear and switching applications.
The complementary PNP types are 2N3789, 2N3790, 2N3791 and 2N3792 respectively.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCBO
Collector-BaseVoltage IE = 0
VCEO
VEBO
IC
IB
PD
TJ
TS
Collector-Emitter
Voltage
IB = 0
Emitter-Base Voltage
Collector Current
Base Current
IC = 0
Total Device Dissipation @ TC = 25°
Junction Temperature
Storage Temperature
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJC
Thermal Resistance, Junction to Case (Max)
2N3713
2N3715
2N3714
2N3716
2N3713
2N3715
2N3714
2N3716
Value
80
100
60
80
7.0
10
4.0
150
-65 to +200
Unit
V
V
V
A
A
W
°C
Value
1.17
Unit
°C/W
05/11/2012
COMSET SEMICONDUCTORS
1|4
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