SB520E-G Datasheet, PDF (2/3 Pages) Comchip Technology – ESD Leaded Schottky Barrier Rectifiers

ESD Leaded Schottky Barrier Rectifiers
Comchip
SMD Diode Specialist
RATING AND CHARACTERISTIC CURVES (SB520E-G Thru. SB5100E-G)
Fig.1 Forward Current Derating Curve
6.0
5.0
4.0
SB520E-G ~ SB545E-G
3.0
Fig.2 Maximum Non-repetitive Peak
Forward Surge Current
200
TL=110°C
8.3mS single half sine-wave
(JEDEC Method)
150
100
SB520E-G ~ SB545E-G
2.0 _{SB550E-G ~ SB5100E-G}
1.0 _{single phase half wave 60Hz}
resistive or inductive load
3.75”(9.5mm) lead length
0
0
25
50
75
100
125 150 175
Lead Temperature ( ^OC)
50
SB550E-G ~ SB5100E-G
01
10
100
Number of Cycles at 60Hz
Fig.3 Typical Instantaneous Forward
Characteristics
50
10
SB580E-G ~ SB5100E-G
1
SB550E-G ~ SB560E-G
0.1
SB520E-G ~ SB545E-G
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
Fig.4A Typical Reverse Characteristics
100
SB520E-G ~ SB545E-G
10
TJ=125°C
1.0
0.1
TJ=100°C
0.01
TJ=25°C
0.001
0
20 40 60 80 100 120 140
Percent of Rated Peak Reverse Voltage (%)
Fig.5 Typical Junction Capacitance per leg
10,000
1,000
Fig.4B Typeical Reverse Characteristic
5
10
SB550E-G ~ SB5100E-G
4
TJ=150°C
10
TJ=125°C
3
10
2
10
TJ=75°C
TJ=25°C
f=1.0MHz
Vsig=50mVp-p
100
0.1
1.0
10
Reverse Voltage (V)
QW-BB043
1
10
TJ=25°C
1
0
20
40
60
80
100
100
Percent of Rated Peak Reverse Voltage ( %)
Comchip Technology CO., LTD.
REV:A
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