MUR160 Datasheet, PDF (2/2 Pages) Comchip Technology – Efficient Fast Rectifier Diode

Efficient Fast Rectifier Diode
COMCHIP
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Rating and Characteristic Curves (MUR160)
FIG. 1-TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTIC
50Ω
NONINDUCTIVE
10Ω
NONINDUCTIVE
(+)
25 Vdc
(approx)
(-)
D.U.T.
1Ω
NON
INDUCTIVE
(-) _+0.5A
PULSE
GENERATOR
( NOTE 2 )
OSCILLOSCOPE ₍₊₎
( NOTE 1 )
0
-0.25A
NOTE: 1. RISETIME=7ns MAX. INPUT
IMPEDANCE=1 MEGOHM 22PF
2. RISE TIME =10ns MAX. SOURCE
IMPEDENCE=50 OHMS
-1.0A
Trr
1cm
SET TIME BASE
FOR 10/20 ns/cm
FIG. 2-TYPICAL FORWARD
CURRENT DERATING CURVE
1.5
SINGLE PHASE
HALF WAVE 60Hz
RESISTIVE OR
1.0
INDUCTIVE LOAD
0.5
0
P.C.B MOUNTED ON
0.3×0.3”(8.0×8.0mm)
COPPER PAD AREAS
0 20 40 60 80 100 120 140 160 180 200
LEAD TEMPERATURE (^oC)
FIG. 3-TYPICAL REVERSE CHARACTERISTICS
100
FIG. 4-TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
10
10
T_J=125^oC
1.0
T_J=80^oC
T_J=25^oC
.1
.01
0 20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 5-MAXIMUN NON-REPETITIVE
FORWARD SURGE CURRENT
100
80
60
40
20
0
0
8.3 ms Single Half Sine Wave
(JEDEC Method)
10
100
NUMBER OF CYCLES AT 60HZ
1.0
MUR160
0.1
.01
.001
.2 .4 .6 .8 1.0 1.2 1.4 1.6 1.8 2.0
INSTANTANEOUS FORWARD VOLTAGE (V)
FIG. 6-TYPICAL JUNCTION CAPACITANCE
200
100
T_J=25^oC
40
20
10
6
4
2
1
.1 .2 .4 1.0 2 4 10 20 40 100
REVERSE VOLTAGE (V)
MDS030300C1
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