MUR160 Datasheet, PDF (1/2 Pages) Comchip Technology – Efficient Fast Rectifier Diode

Efficient Fast Rectifier Diode
MUR160
Voltage: 600 Volts
Current: 1.0 A
Features
Low power loss, high efficiency
Low Leakage
Low Forward Voltage Drop
Hgh Current Capability
High Speed Switching
High Reliability
High Current Surge
Glass Passivated Chip Junction
Mechanical data
Case:GMolded Plastic
Epoxy: GUl 94v-0 Rate Flame Retardant
Lead: GMil-Std-202e Method 208c Guaranteed
Mounting Position: GAny
COMCHIP
www.comchiptech.com
CASE-DO41
1.0(25.4)
MIN
.205(5.2)
.166(4.2)
1.0(25.4)
MIN
.034(0.9)
.028(0.7)
.107(2.7)
.080(2.0)
Dimensions In Inches And (Millimeters)
Maximum Ratings and Electrical Characterics
RATINGS
SYMBOL
MAXIMUM RECURRENT PEAK REVERSE VOLTAGE
V_RRM
MAXIMUM RMS VOLTAGE
V_RMS
MAXIMUM DC BLOCKING VOLTAGE
V_DC
MAXIMUM AVERAGE FORWARD RECTIFIED CURRENT
.375'' (9.5mm) LEAD LENGTH AT TA=55°C
I_O
MUR160
600
420
600
1
PEAK FORWARD SURGE CURRENT, 8.3ms SINGLE
HALF SINE-WAVE SUPERIMPOSED ON RATED LOAD
I_FSM
35
TYPICAL JUNCTION CAPACITANCE (NOTE 1)
TYPICAL THERMAL RESISTANCE (NOTE 2)
STORAGE TEMPERATURE RANGE
OPERATING TEMPERATU RE RANGE
C_J
R_qja
T_STG
T_OP
20
15
- 55 TO + 150
- 55 TO + 150
ELECTRICAL CHARACTERISTICS (A_T T_A =25°C UNLESS OTHERWISE NOT ED)
CHARACTERISTICS
MAXIMUM FORW ARD VOLTAGE AT I_O DC
MAXIMUM REVERSE CURRENT AT 25°C
MAXIMUM REVERSE CURRENT AT 100°C
MAXIMUM REVERSE RECOVERY TIME (NOTE 3)
SYMBOL
V_F
I_R
I_R
T_RR
MUR160
1.25
5
250
50
UNITS
V
V
V
A
A
PF
°C/W
°C
°C
UNITS
V
mA
mA
nS
NOTE:
1. MEASURED AT 1 MHZ AND APPLIED REVERSE VOLTAGE 0 F 4.0 VOLTS
2. BOTH LEADS ATTATCHED TO HEAT SINK 20×20×1t(mm) COPPER PLATE AT LEAD LENT H 5mm
3. REVERSE RECOVERY TEST CONDITIONS: IF=0.5A, IR=1.0A, IRR=0.25A
MDS030300C1
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