FMMT493-G Datasheet, PDF (2/5 Pages) Comchip Technology – General Purpose Transistor

General Purpose Transistor
Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Conditions
Symbol Min
Collector-base breakdown voltage
IC = 100μA , IE = 0
V(BR)CBO
120
Collector-emitter breakdown voltage IC = 10mA , IB = 0
V(BR)CEO
100
Emitter-base breakdown voltage
IE = 100μA , IC = 0
V(BR)EBO
5
Collector cut-off current
VCB = 100V , IE = 0
ICBO
Collector cut-off current
VCES = 100V , IE = 0
ICES
Emitter cut-off current
VEB = 4V , IC = 0
IEBO
VCE = 10V , IC = 1mA
hFE(1)*
100
DC current gain
VCE = 10V , IC = 250mA
VCE = 10V , IC = 0.5A
hFE(2)*
hFE(3)*
100
60
VCE = 10V , IC = 1A
hFE(4)*
20
Collector-emitter saturation voltage
IC = 500mA , IB = 50mA
IC = 1A , IB = 100mA
VCE(sat) 1*
VCE(sat) 2*
Base-emitter saturation voltage
IC = 1A , IB = 100mA
VBE(sat)*
Base-emitter voltage
VCE = 10V , IC = 1A
VBE*
Transition frequency
VCE = 10V , IC = 50mA , f = 100MHZ
fT
150
Collector output capacitance
VCB = 10V, IE = 0 , f = 1MHZ
Cob
*Pulse test: pulse width ≤ 300µs, duty cycles ≤ 2.0%
Typ
Max Unit
V
V
V
0.1
µA
0.1
µA
0.1
µA
300
0.3
0.6
1.15
1
10
V
V
V
V
MHZ
PF
RATING AND CHARACTERISTIC CURVES ( FMMT493-G )
Fig.1 - Static Characteristic
8
C-O50M0uMA ON
E-4M50IuTATER
Ta=25°C
6
IB=30uA
IB=27uA
IB=24uA
IB=21uA
4
IB=18uA
IB=15uA
IB=12uA
2
IB=9uA
IB=6uA
IB=3uA
0
0
2
4
6
8
10
12
14
Collector-Emitter Voltage, VCE (V)
400
350
300
250
200
150
100
1
Fig.2 - hFE — IC
VCE = 10V
Ta=100°C
Ta=25°C
10
100
Collector Current , IC (mA)
1000
Company reserves the right to improve product design , functions and reliability without notice.
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