FMMT493-G Datasheet, PDF (1/5 Pages) Comchip Technology – General Purpose Transistor

General Purpose Transistor
FMMT493-G (NPN)
RoHS Device
Features
- Complementary type FMMT593
- Low saturation voltage
- High hFE Max. 300@250mA
- IC = 1A
Circuit Diagram
- 1 : BASE
- 2 : EMITTER
- 3 : COLLECTOR
1
Base
Collector
3
2
Emitter
SOT-23
0.055(1.40)
0.047(1.20)
0.118(3.00)
0.110(2.80)
3
1
2
0.079(2.00)
0.071(1.80)
0.041(1.05)
0.035(0.90)
0.006(0.15)
0.003(0.08)
0.100(2.55)
0.089(2.25)
0.020(0.50)
0.012(0.30)
0.004(0.10)
0.000(0.00)
Dimensions in inches and (millimeter)
Maximum Ratings (at TA=25°C unless otherwise noted)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Thermal resistance from junction to ambient
Junction temperature range
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ
Tstg
Value
120
100
5
1000
250
500
150
-55~+150
Unit
V
V
V
mA
mW
°C/W
°C
°C
Company reserves the right to improve product design , functions and reliability without notice.
QW-BTR47
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