CPC3720C Datasheet, PDF (2/4 Pages) Clare, Inc. – N-Channel Depletion-Mode Vertical DMOS FETs

CPC3720C
Absolute Maximum Ratings (@ 25˚ C)
Parameter
Ratings Units
Drain-to-Source Voltage
350
V
Gate-to-Source Voltage
Total Package Dissipation
±20
V
1.6¹
W
Operational Temperature
-55 to +125 ºC
Storage Temperature
-55 to +125 ºC
1 Mounted on FR4 board 1"x1"x0.062"
Absolute Maximum Ratings are stress ratings. Stresses in
excess of these ratings can cause permanent damage to
the device. Functional operation of the device at conditions
beyond those indicated in the operational sections of this
data sheet is not implied.
Electrical Characteristics
Parameter
Symbol
Conditions
Min Typ Max Units
Y _{Drain-to-Source Breakdown Voltage}
BV_DSX
V_GS= -5V, I_D=100µA
350
-
-
V
Gate-to-Source Off Voltage
V_GS(off)
V_DS= 10V, I_D=1mA
-1.6 -2.4 -3.9 V
Change in V_GS(off) with Temperatures
d_VGS(off)/dT
V_DS= 10V, I_D=1mA
-
-
3.3 mV/ºC
R _{Gate Body Leakage Current}
I_GSS
V_GS=±20V, V_DS=0V
-
- 100 nA
Drain-to-Source Leakage Current
I_D(off)
V_GS= -5V, V_DS=Max Rating
-
V_GS= -5V, V_DS=0.8 Max Rating T_A=125ºC
-
-
-
1
µA
1
mA
A _{Saturated Drain-to-Source Current}
I_DSS
V_GS= 0V, V_DS=15V
130
-
-
mA
Static Drain-to-Source ON-State Resistance
R_DS(on)
V_GS= 0V, I_D=130mA
-
-
22
Ω
IN ^{Change in RDS(on) with Temperatures}
dR_DS(on)/dT
V_GS= 0V, I_D=130mA
-
-
0.9 %/ºC
Forward Transconductance
G_FS
I_D= 100mA, V_DS = 10V
225
-
-
m
Input Capacitance
C_ISS
Common Source Output Capacitance
C_OSS
Reverse Transfer Capacitance
C_RSS
V_GS= -5V
V_DS= 25V
f= 1Mhz
70 350
-
20 60 pF
10 60
IM ^{Turn-ON Delay Time}
Rise Time
Turn-OFF Delay Time
L ^{Fall time}
t_d(on)
t_r
t_d(off)
t_f
V_DD= 25V
I_D= 150mA
V_GS= 0V to -10V
R_GEN= 50Ω
20
-
10
20
-
ns
50
Source-Drain Diode Voltage Drop
V_SD
V_GS= -5V, I_SD= 150mA
-
0.6 1.8
V
E _{Thermal Characteristics}
R _Package
P ^SOT-89
I_D (continuous) I_D (pulsed)
130mA
600mA
Power Dissipation @TA=25ºC
1.6W¹
θ_jcºC/W
15
I_DR
130mA
I_DRM
600mA
1 Mounted on FR4 board 1"x1"x0.062"
2
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