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CPC3720C Datasheet, PDF (1/4 Pages) Clare, Inc. – N-Channel Depletion-Mode Vertical DMOS FETs
CPC3720C
N-Channel Depletion-Mode
Vertical DMOS FETs
BVDSX/
BVDGX
350V
RDS(ON)
(max)
22Ω
IDSS (min)
130mA
Package
SOT-89
Description
The CPC3720C is an N-channel depletion mode field
effect transistor (FET) that utilizes Clare’s proprietary
third generation vertical DMOS process. Third
generation process realizes world class, high voltage
Features
MOSFET performance in an economical silicon gate
• Depletion mode device offers low RDS(ON) at cold
temperatures
process. Our vertical DMOS process yields a robust
device for high power applications with high input
• Low on resistance 22 ohms max. at 25ºC
• High input impedance
• High breakdown voltage 350V
• Low VGS(off) voltage -1.6 to -3.9V
Y • Small package size SOT-89
R Applications
• Ignition modules
• Normally-on switches
A • Solid state relays
• Converters
• Telecommunications
IN • Power supply
IM Package Pinout
D
L G
D
S
PRE (SOT-89)
impedance. The CPC3720C is a highly reliable FET
device that has been used extensively in Clare’s solid
state relays for industrial and telecommunications
applications.
This device excels in power applications requiring
low drain-source resistance, particularly in cold
environments such as automotive ignition modules.
The CPC3720C offers a low 20 ohm maximum on-
state resistance at 25ºC.
The CPC3720C has a minimum breakdown voltage of
350V and is available in an SOT-89 package. As with
all MOS devices, the FET structure prevents thermal
runaway and thermal-induced secondary breakdown.
Ordering Information
Part #
CPC3720C
CPC3720CTR
Description
SOT-89 (100/Tube)
SOT-89 (2000/Reel)
Switching Waveform
Test Circuit
VDD
VDD
0V
INPUT
-10V
VDD
OUTPUT
0V
0V
INPUT
10%
-10V 10%
t(ON)
td(ON)
tr
VDD
10%
OUTPUT
0V 90%
90%
90%
t(ON) t(OFF)
td(ON) td(OtFrF)
tF
t(OFF)
td(OFF)
tF
10%
10%
10%
90%
90%
90%
PULSE
GENERATOR
PULSE
GENERATOR
Rgen
Rgen
INPUT
INPUT
RL
RL
OUTPUT
OUTPUT
D.U.T.
D.U.T.
DS-CPC3720C-R00A.7
www.clare.com
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