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CPC3703 Datasheet, PDF (2/4 Pages) Clare, Inc. – N-Channel Depletion-Mode Vertical DMOS FETs
CPC3703
Absolute Maximum Ratings
Parameter
Ratings
Drain-to-Source Voltage
250
Gate-to-Source Voltage
±20
Total Package Dissipation 1
1.6
Operational Temperature
-55 to +125
Storage Temperature
-55 to +125
Units
V
V
W
ºC
ºC
1 Mounted on 1"x1" FR4 board.
Absolute Maximum Ratings are stress ratings. Stresses in
excess of these ratings can cause permanent damage to
the device. Functional operation of the device at conditions
beyond those indicated in the operational sections of this
data sheet is not implied.
Thermal Characteristics
Package
ID (continuous) ID (pulsed)
SOT-89
360mA
600mA
Power Dissipation
@TA=25ºC
1.6W
θjc
ºC/W
15
IDR
360mA
IDRM
600mA
Electrical Characteristics
Parameter
Drain-to-Source Breakdown Voltage
Gate-to-Source Off Voltage
Change in VGS(off) with Temperature
Gate Body Leakage Current
Drain-to-Source Leakage Current
Saturated Drain-to-Source Current
Static Drain-to-Source On-State Resistance
Change in RDS(on) with Temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Source-Drain Diode Voltage Drop
Symbol
BVDSX
VGS(off)
dVGS(off) /dT
IGSS
ID(off)
IDSS
RDS(on)
dRDS(on) /dT
GFS
CISS
COSS
CRSS
td(on)
tr
td(off)
tf
VSD
Conditions
VGS= -5V, ID=100µA
VDS= 15V, ID=1mA
VDS= 15V, ID=1mA
VGS=±20V, VDS=0V
VGS= -5V, VDS=Max Rating
VGS= -5V, VDS=200V, TA=125ºC
VGS= 0V, VDS=15V
VGS= 0V, ID=200mA
ID= 100mA, VDS = 10V
VGS= -5V
VDS= 25V
f= 1MHz
VDD= 25V
ID= 150mA
VGS= 0V to -10V
RGEN= 50Ω
VGS= -5V, ISD=150mA
Switching Waveform & Test Circuit
0V
INPUT
-10V
10%
VDD
OUTPUT
0V
t(ON)
td(ON)
tr
10%
90%
90%
t(OFF)
td(OFF)
tF
10%
90%
PULSE
GENERATOR
Rgen
INPUT
Min Typ Max Units
250
-
-
V
-1.6
-
-3.9
V
-
-
4.5 mV/ºC
-
- 100 nA
-
-
1
µA
-
-
1
mA
300
-
-
mA
-
-
4
Ω
-
-
1.1 %/ºC
225
-
-m
327 350
-
51
65
pF
27 35
23 35
8
20
-
17
25
ns
70
80
-
0.6 1.8
V
VDD
RL
OUTPUT
D.U.T.
2
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R03