CPC3703 Datasheet, PDF (1/4 Pages) Clare, Inc. – N-Channel Depletion-Mode Vertical DMOS FETs

BV_DSX/
BV_DGX
250V
R_DS(ON)
(max)
4Ω
I_DSS (min)
360mA
Package
SOT-89
Features
• Depletion mode device offers low R_DS(ON) at cold
temperatures
• Low on resistance 4 ohms max. at 25ºC
• High input impedance
• High breakdown voltage 250V
• Low V_GS(off) voltage -1.6 to -3.9V
• Small package size SOT89
Applications
• Ignition Modules
• Normally-on Switches
• Solid State Relays
• Converters
• Telecommunications
• Power Supply
Package Pinout
D
G
D
S
(SOT89)
CPC3703
N-Channel Depletion-Mode
Vertical DMOS FETs
Description
The CPC3703 is an N-channel, depletion mode, field
effect transistor (FET) that utilizes Clare’s proprietary
third-generation vertical DMOS process. The
third-generation process realizes world class, high
voltage MOSFET performance in an economical
silicon gate process. Our vertical DMOS process
yields a robust device, with high input impedance,
for use in high-power applications. The CPC3703
is a highly reliable FET device that has been used
extensively in Clare’s Solid State Relays for industrial
and telecommunications applications.
This device excels in power applications that require
low drain-source resistance, particularly in cold
environments such as automotive ignition modules.
The CPC3703 offers a low, 4Ω maximum, on-state
resistance at 25ºC.
The CPC3703 has a minimum breakdown voltage of
250V, and is available in an SOT89 package. As with
all MOS devices, the FET structure prevents thermal
runaway and thermal-induced secondary breakdown.
Ordering Information
Part #
CPC3703C
CPC3703CTR
Description
SOT89 (100/Tube)
SOT89 (2000/Reel)
Circuit Symbol
D
G
S
Pb
RoHS
2002/95/EC
e3
DS-CPC3703-R03
www.clare.com
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