MJU02N70CT Datasheet, PDF (2/7 Pages) Chip Integration Technology Corporation – 700V Super Junction Power MOSFET

Chip Integration Technology Corporation
MJU02N70CT
700V Super Junction Power MOSFET
■ Electrical characteristics(T_J = 25^OC unless otherwise specified)
■ Static Characteristics
PARAMETER
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
Gate Resistance
CONDITIONS
V_GS = 0V, I_D = 250µA
V_GS = V_DS, I_D = 250µA
V_DS = 700V, V_GS = 0V, T_J = 25°C
V_DS = 700V, V_GS = 0V, T_J = 150°C
V_GS = ±30V, V_DS = 0V
V_GS = 10V, I_DS = 1.0A
V_GS = 0V, V_DS open, f=1MHz
■ Dynamic Characteristics(note:5)
PARAMETER
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate to Source Charge
Gate to Drain (Miller) Charge
Turn on Delay Time
Rise Time
Turn off Delay Time
Fall Time
■ Reverse Diode Characteristics
PARAMETER
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
CONDITIONS
V_DS = 100V, V_GS = 0V, F = 1MHz
i ^{n a r y VDD = 400V, ID = 1.0A VGS=10V}
r ^{e l i m VDD = 400, ID = 1.0A,VGS=10V RG =25Ω}
P
CONDITIONS
I_F =1.0A, V_GS = 0V
V_R =300V, I_F =1.0A, dI_F/dt = 100A/μs
Symbol
V_(BR)DSS
V_GS(th)
I_DSS
I_GSS
R_DS(on)
R_G
MIN. TYP. MAX.
700 -
-
2
3
4
-
-
1
-
10
-
-
- ±100
- 1.6 1.8
-
2.9
-
UNIT
V
µA
nA
Ω
Ω
Symbol
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
MIN. TYP. MAX.
- 236 -
- 12.7 -
-
0.8
-
-
4.6
-
-
1.0
-
- 1.4
-
-
23
-
-
22
-
-
20
-
-
25
-
UNIT
pF
nC
ns
Symbol
V_SD
t_rr
Q_rr
MIN. TYP. MAX.
-
0.9 1.2
- 400 -
-
0.5
-
UNIT
V
ns
µC
Document ID : DS-22M81
2
Revised Date : 2015/12/11
Revision : C