MJU02N70CT Datasheet, PDF (1/7 Pages) Chip Integration Technology Corporation – 700V Super Junction Power MOSFET

Chip Integration Technology Corporation
MJU02N70CT
700V Super Junction Power MOSFET
■ Features
• High speed power switching
• 100% UIS tested, 100% Rg tested
• Εnhanced avalanche ruggedness
• Lead free, halogen free
■ Application
• SMPS
• Ηard switching and high speed circuit
• LED lighting
• Flyback
■ Pin Description
TO-251
■ Main product characteristics
V_DS
R_DS(on),max
I_D
700V
1.8Ω
2A
inary
l ^{i m} _{■ Absolute Maximum Ratings (TA = 25OC unless otherwise specified)}
r ^{e PARAMETER}
CONDITIONS
Continuous Drain Current
P ^{TC = 25OC}
Drain to Source Voltage
Gate to Source Voltage
Pulsed Drain Current
Avalanche energy, single pulse
Power Dissipation
Operating and Storage Temperature
L =4.0mH, T_C =25^OC
T_C = 25^OC
■ Absolute Maximum Ratings
PARAMETER
Thermal Resistance Junction-case
Thermal Resistance Junction-Ambient
Symbol
I_D
V_DS
V_GS
I_DM
E_AS
P_D
T_J, T_STG
MJU02N70CT
2
700
±30
5.8
10
63
-55 to 150
UNIT
A
V
V
A
mJ
W
O_C
Symbol
R_θJC
R_θJA
MJU02N70CT
2
55
UNIT
O_C/W
O_C/W
Document ID : DS-22M81
1
Revised Date : 2015/12/11
Revision : C