20N65Y Datasheet, PDF (2/7 Pages) Chongqing Pingwei Enterprise co.,Ltd – 20 Amps,650 Volts N-CHANNEL MOSFET

Electrical Characteristics (Tc=25℃,unless otherwise noted)
Parameter
Symbol
Test Conditions
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V,ID=250uA
Breakdown Temperature Coefficient
ΔBVDSS Reference to 25℃，
/ΔTJ
ID=250uA
Zero Gate Voltage Drain Current
IDSS
VDS=650V,VGS=0V
Gate-Body Leakage Current,Forward
IGSSF
VGS=30V,VDS=0V
Gate-Body Leakage Current,Reverse
IGSSR
VGS=-30V,VDS=0V
On Characteristics
Gate-Source Threshold Voltage
VGS(th)
VDS=10V,ID=250uA
Drain-Source On-State Resistance
RDS(on)
VGS=10V,ID=10A
Dynamic Characteristics
Input Capacitance
Output Capacitance
Ciss
VDS=25V,VGS=0V,
Coss
f=1.0MHZ
Reverse Transfer Capacitance
Crss
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
td(on)
VDD=325V,ID=20A,
tr
RG=25Ω
(Note4,5)
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Qg
VDS=480V,ID=20A,
Qgs
VGS=10V, (Note4,5)
Gate-Drain Charge
Qgd
Drain-Source Body Diode Charcteristics and Maximum Ratings
Continuous Diode Forward Current
IS
Pulsed Diode Forward Current
ISM
Diode Forward Voltage
VSD
IS=20A,VGS=0V
Reverse Recovery Time
Reverse Recovery Charge
trr
VGS=0V,IS=20A,
Qrr
dIF/dt=100A/us, (Note4)
Notes
1. Repetitive Rating:pulse width limited by maximum junction temperature.
2. VDD=50V,L=10mH,Rg=25Ω,IAS=20A , starling TJ=25℃.
3. ISD≤ID,dI/dt=200A/us,VDD≤BVDSS,starting TJ=25℃.
4. Pulse width≤300us;duty cycle≤2%.
5. Repetitive rating; pulse width limited by maximum junction temperature.
Min
650
－
－
－
－
2
－
－
－
－
－
－
－
－
40
5
10
－
－
－
－
－
Typ Max
－
－
0.6
－
－
1
－
100
－ -100
－
4
0.32 0.5
2370 －
1280 －
95 －
62 －
140 －
230 －
65 －
75 100
13.5 25
36 50
－ 20
－ 80
－ 1.5
530 －
10.5 －
Units
V
V/℃
μA
nA
nA
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
A
V
ns
μC
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