20N65Y Datasheet, PDF (1/7 Pages) Chongqing Pingwei Enterprise co.,Ltd – 20 Amps,650 Volts N-CHANNEL MOSFET

20N65Y
20 Amps,650 Volts N-CHANNEL MOSFET
FEATURE
 20A,650V,RDS(ON)MAX=0.50Ω@VGS=10V/10A
 Low gate charge
 Low Ciss
 Fast switching
 100% avalanche tested
 Improved dv/dt capability
TO-247
Absolute Maximum Ratings(TC=25℃,unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(Note1)
Single Pulse Avalanche Energy (Note 2)
Avalanche Current(Note1)
Repetitive Avalanche Energy (Note1)
Reverse Diode dV/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8"from case for 5 seconds
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
TJ,TSTG
TL
Thermal Characteristics
Parameter
Maximum Junction-to-Case
Maximum Power Dissipation
TC=25℃
Symbol
RthJC
PD
20N65Y
650
±30
20
80
900
20
630
5
-55 to +150
260
UNIT
V
A
mJ
A
mJ
V/ns
℃
℃
TO-220MF
0.3
417
Units
℃/W
W
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