20N06 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – Fast Switching

Electrical Characteristics (Tc=25℃,unless otherwise noted)
Parameter
Symbol
Test Conditions
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V,ID=250uA
Breakdown Temperature Coefficient
ΔBVDSS Reference to 25℃，
/ΔTJ
ID=250uA
Zero Gate Voltage Drain Current
IDSS
VDS=60V,VGS=0V
Gate-Body Leakage Current,Forward
IGSSF
VGS=20V,VDS=0V
Gate-Body Leakage Current,Reverse
IGSSR
VGS=-20V,VDS=0V
On Characteristics
Gate-Source Threshold Voltage
VGS(th)
VDS=10V,ID=250uA
Drain-Source On-State Resistance
RDS(on)
VGS=10V,ID=10A
Dynamic Characteristics
Input Capacitance
Ciss
VDS=25V,VGS=0V,
Output Capacitance
Coss
f=1.0MHZ
Reverse Transfer Capacitance
Crss
Switching Characteristics
Turn-On Delay Time
td(on)
VDD=30V,ID=10A,
Turn-On Rise Time
tr
RG=25Ω
(Note4,5)
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
Total Gate Charge
Qg
VDS=48V,ID=20A,
Gate-Source Charge
Qgs
VGS=10V, (Note4,5)
Gate-Drain Charge
Qgd
Drain-Source Body Diode Charcteristics and Maximum Ratings
Continuous Diode Forward Current
IS
Pulsed Diode Forward Current
ISM
Diode Forward Voltage
VSD
IS=20A,VGS=0V
Reverse Recovery Time
trr
VGS=0V,IS=20A,
Reverse Recovery Charge
Qrr
dIF/dt=100A/us, (Note4)
Notes
1. Repetitive Rating:pulse width limited by maximum junction temperature.
2. VDD=10V,L=1mH,Rg=25Ω,IAS=20A , TJ=25℃.
3. ISD≤ID,dI/dt=200A/us,VDD≤BVDSS,starting TJ=25℃.
4. Pulse width≤300us;duty cycle≤2%.
5. Repetitive rating; pulse width limited by maximum junction temperature.
Mix Typ Max Units
60
－
－
V
－
0.5
－ V/℃
－
－
1
uA
－
－
100
nA
－
－ -100 nA
1.0
－
3.0
V
－
－ 36
mΩ
－ 450 590
pF
－ 170 220
pF
－
25
35
pF
－
5
20
ns
－
45 100
ns
－
20
50
ns
－
25
60
ns
－ 11.5 15
nC
－
3
－
nC
－
4.5
－
nC
－
－
20
A
－
－
80
A
－
－
1.5
V
－
43
－
ns
－
50
－
uC
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