20N06 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Fast Switching

20N06(F,B,H)
20A mps,60 Volts N-CHANNEL MOSFET
FEATURE
 20A,60V,RDS(ON)=36mΩ@VGS=10V/10A
 Low gate charge
 Low Ciss
 Fast switching
 100% avalanche tested
 Improved dv/dt capability
TO-220AB
20N06
ITO-220AB
20N06F
TO-263
20N06B
TO-262
20N06H
Absolute Maximum Ratings(TC=25℃,unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(Note1)
Single Pulse Avalanche Energy (Note 2)
Avalanche Current(Note1)
Repetitive Avalanche Energy (Note1)
Reverse Diode dV/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8"from case for 5 seconds
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
TJ,TSTG
TL
Mounting Torque
6-32 or M3 screw
20N06
60
±20
20
80
155
20
5.3
7.0
-55 to +150
260
10
1.1
UNIT
V
A
mJ
A
mJ
V/ns
℃
℃
lbf·in
N·m
Thermal Characteristics
Parameter
Maximum Junction-to-Case
Maximum Power Dissipation
TC=25℃
Symbol
RthJC
PD
ITO-220
4
31.5
- 页码 -
TO-220
2
62.5
TO-262
TO-263
2
62.5
Units
℃/W
W
Rev. 14-1
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