CHT870PT Datasheet, PDF (4/4 Pages) Chenmko Enterprise Co. Ltd. – N-Channel Enhancement Mode Field Effect Transistor

RATING CHARACTERISTIC CURVES ( CHT870PT )
Typical Electrical Characteristics (continued)
Figure 7. Breakdown Voltage Variation
with Temperature
1.1
1.075
ID = 250µA
1.05
1.025
1
0.975
0.95
0.925
-50
-25
0
25
50
75
100 125 150
TJ , JUNCTION TEM PERATURE (°C)
Figure 8. Body Diode Forward Voltage
Variation with Drain Current
2
1
VGS = 0V
0 .5
0 .1
0 .0 5
TJ = 1 2 5 °C
25°C
-5 5 ° C
0 .0 1
0 .0 0 5
0 .0 0 1
0 .2
0 .4
0 .6
0 .8
1
1 .2
1 .4
VSD , BODY DIODE FORWARD VOLTAGE (V)
Figure 9. Capacitance Characteristics
60
40
C iss
20
10
C oss
5
f = 1 MHz
2
VGS = 0V
C rss
1
1
2
3
5
10
20 30
50
VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 10. Gate Charge Characteristics
1.0
VDS = 30V
.8
.6
.4
.2
ID =250mA
0
0
0 .1
0 .2
0 .3
0 .4
0.5
Q g , GATE CHARGE (nC)
V_GS
Figure 11.
V_DD
VIN
R_L
D
V _OUT
R _GEN
G
DUT
S
t d(on)
Figure 12. Switching Waveforms
t _on
tr
90%
t d(off)
t_off
tf
90%
Output, Vout
Input, Vin
10%
10%
50%
10%
90% ^Inverted
50%
Pulse Width