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| CHT870PT Datasheet, PDF (2/4 Pages) Chenmko Enterprise Co. Ltd. – N-Channel Enhancement Mode Field Effect Transistor | |||
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RATING CHARACTERISTIC CURVES ( CHT870PT )
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VGS = 0 V, ID = 100µA
VDS = 60 V, VGS = 0 V
IGSSF
IGSSR
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
VGS = 15 V, VDS = 0 V
VGS = -15 V, VDS = 0 V
60 80
V
1
µA
TC=125°C
0.5 mA
10
nA
-10 nA
ON CHARACTERISTICS (Note 1)
VGS(th)
RDS(ON)
VDS(ON)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
Static Drain-Source On-Resistance VGS = 10 V, ID = 250 mA
VGS = 4.0 V, ID = 100 mA
Drain-Source On-Voltage
VGS = 10 V, ID = 500mA
VGS = 5.0 V, ID = 50 mA
ID(ON)
gFS
On-State Drain Current
Forward Transconductance
VGS = 10 V, VDS = 7.5VDS(on)
VGS = 4.5V, VDS = 10VDS(on)
VDS = 15 V , DS(on) ID = 200 m A
1
2.0 3.0
V
2.0 5.0 â¦
2.5 4.0
0.6 3.75 V
0.09 1.5
800 1800
mA
500 700
100
mS
DYNAMIC CHARACTERISTICS
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
ton
Turn-On Time
tr
toff
Turn-Off Time
tf
Note:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
VDS = 30 V, VGS = 10 V,
I D= 250 mA
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
VDD = 30 V, RL = 200 â¦,
ID = 100 mA, VGS = 10 V,
RGEN = 10 â¦
VDD = 30 V, RL = 200 â¦,
ID = 100 mA, VGS = 10 V,
RGEN = 10 â¦
0.6 1.0 nC
0.06 25
0.06 5
25 50
pF
6 25
1.2 5
7.5 20
nS
6
7.5 20
nS
3
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