CEM3138 Datasheet, PDF (5/7 Pages) Chino-Excel Technology – Dual N-Channel Enhancement Mode Field Effect Transistor

CHANNEL 2
40
V_GS=10,6,4.5V
30
20
V_GS=4.0V
V_GS=3.5V
10
V_GS=3.0V
V_GS=2.5V
0
0
1
2
3
4
VDS, Drain-to-Source Voltage (V)
Figure 7. Output Characteristics
1200
1000
Ciss
800
600
Coss
400
200
Crss
0
0
5
10
15
20
25
VDS, Drain-to-Source Voltage (V)
Figure 9. Capacitance
1.3 _VDS=VGS
1.2 ^ID^=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 11. Gate Threshold Variation
with Temperature
5
CEM3138
25
25 C
20
15
5
10
5
T_J=125 C
-55 C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VGS, Gate-to-Source Voltage (V)
Figure 8. Transfer Characteristics
2.2 _ID=6.3A
1.9 ^VGS=10V
1.6
1.3
1.0
0.7
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 10. On-Resistance Variation
with Temperature
V_GS=0V
10¹
10⁰
10^-1
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Body Diode Forward Voltage (V)
Figure 12. Body Diode Forward Voltage
Variation with Source Current