CEM3138 Datasheet, PDF (1/7 Pages) Chino-Excel Technology – Dual N-Channel Enhancement Mode Field Effect Transistor

CEM3138
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 9.1A, R_DS(ON) = 15mΩ @V_GS = 10V.
R_DS(ON) = 21mΩ @V_GS = 4.5V.
30V, 6.9A, R_DS(ON) = 26mΩ @V_GS = 10V.
R_DS(ON) = 35mΩ @V_GS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
SO-8
1
5
D1 D1 D2 D2
8
7
6
5
1
2
3
4
S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS T_A = 25 C unless otherwise noted
Parameter
Symbol
Channel 1
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
V_GS
±20
Drain Current-Continuous
Drain Current-Pulsed ^a
I_D
9.1
I_DM
36.4
Channel 2
30
±20
6.9
27.6
Maximum Power Dissipation
P_D
2.0
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Units
V
V
A
A
W
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient ^b
Symbol
RθJA
Limit
62.5
Units
C/W
Details are subject to change without notice .
1
Rev 2. 2006.Nov
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