CEP9060N Datasheet, PDF (3/4 Pages) Chino-Excel Technology – N-Channel Enhancement Mode Field Effect Transistor

CEP9060N/CEB9060N
CEF9060N
120
V_GS=10,8,7V
100
80
V_GS=6V
60
40
V_GS=5V
20
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
120
100
80
60
40
20
0
1
T_J=125 C
25 C
2
3
4
5
-55 C
6
7
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
4800
4000
Ciss
3200
2400
1600
800
Coss
Crss
0
0
5
10
15
20
25
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3 _VDS=VGS
1.2 ^ID^=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
2.2 _ID=62A
1.9 ^VGS=10V
1.6
1.3
1.0
0.7
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
V_GS=0V
10²
10¹
10⁰
0.2
0.6
1.0
1.4
1.8
2.2
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3