CEP9060N Datasheet, PDF (1/4 Pages) Chino-Excel Technology – N-Channel Enhancement Mode Field Effect Transistor

CEP9060N/CEB9060N
CEF9060N
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEP9060N
CEB9060N
CEF9060N
V_DSS
55V
55V
55V
R_DS(ON)
10.5mΩ
10.5mΩ
10.5mΩ
I_D
90A
90A
90A ^e
@V_GS
10V
10V
10V
D
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package & TO-220F full-pak for through hole.
G
D
G
G
G
S
D
S
D
S
S
CEB SERIES
CEP SERIES
CEF SERIES
TO-263(DD-PAK)
TO-220
TO-220F
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263 TO-220F
Drain-Source Voltage
V_DS
55
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed ^a
V_GS
±20
I_D
90
90 ^e
I_DM ^f
360
360 ^e
Maximum Power Dissipation @ T_C = 25 C
- Derate above 25 C
166
49
P_D
1.11
0.33
Single Pulsed Avalanche Energy ^d
Single Pulsed Avalanche Current ^d
Operating and Store Temperature Range
E_AS
I_AS
T_J,T_stg
325
325
50
50
-55 to 175
Units
V
V
A
A
W
W/ C
mJ
A
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
0.9
3
62.5
65
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 4. 2007.Oct.
http://www.cetsemi.com