CEP10N6 Datasheet, PDF (3/5 Pages) Chino-Excel Technology – N-Channel Logic Level Enhancement Mode Field Effect Transistor

CEP10N6/CEB10N6
ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted)
4
Parameter
Symbol Condition
Min Typ Max Unit
DYNAMIC CHARACTERISTICS^b
Input Capacitance
Output Capacitance
CISS
VDS =25V, VGS = 0V
COSS
f =1.0MHZ
Reverse Transfer Capacitance
CRSS
DRAIN-SOURCE DIODE CHARACTERISTICS ^a
1500
PF
125
PF
50
PF
Diode Forward Voltage
VSD VGS = 0V, Is =10A
1.6 V
Notes
a.Pulse Test:Pulse Width^ś300ijs, Duty Cycle ^ś 2%.
b.Guaranteed by design, not subject to production testing.
12
VGS=10,9,8,7V
10
8
6
4
2
0
0
2
4
6
VGS=6V
VGS=5V
8 10 12
Figure 1. Output Characteristics
10
150 C
1
-55 C
0.1
2
4
25 C
6
1.VDS=40V
2.Pulse Test
8
10
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
4-174