CEM4804 Datasheet, PDF (3/5 Pages) Chino-Excel Technology – Dual N-Channel Enhancement Mode Field Effect Transistor

CEM4804
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)
Parameter
Symbol Condition
5 DRAIN-SOURCE DIODE CHARACTERISTICS ^b
Diode Forward Voltage
VSD
VGS = 0V, Is =2A
Min Typ^C Max Unit
1.3 V
Notes
a.Surface Mounted on FR4 Board, t ^ś10sec.
b.Pulse Test:Pulse Width^ś300ijs, Duty Cycle ^ś 2%.
c.Guaranteed by design, not subject to production testing.
20
15
VGS=10,8,6,5V
16
VGS=4V
12
12
9
8
4
VGS=3V
0
0 0.5 1.0 1.5 2.0 2.5 3.0
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
6
25 C
3
Tj=125 C
-55 C
0 _1.0
1.5
2.0
2.5
3.0
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
1200
1000
Ciss
800
600
Coss
400
200
0
0
5 10 15
Crss
20 25 30
VDS, Drain-to Source Voltage (V)
Figure 3. Capacitance
1.80
ID=6.3A
VGS=10V
1.60
1.40
1.20
1.00
0.80
0.60
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation with
Temperature
5-100