CEM4435A_10 Datasheet, PDF (3/4 Pages) Chino-Excel Technology – P-Channel Enhancement Mode Field Effect Transistor

25
-V_GS=10,8,7,6,5V
20
15
-V_GS=4V
10
5
-V_GS=3V
0
0.0
0.5
1.0
1.5
2.0
2.5
-VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
2400
2000
Ciss
1600
1200
800
400
Coss
Crss
0
0
5
10
15
20
25
-VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3 _VDS=VGS
1.2 ^ID^=-250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
CEM4435A
30
24
25 C
18
12
6
T_J=125 C
-55 C
0
0
1
2
3
4
5
6
-VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
2.2 _ID=-8A
1.9 ^VGS=-10V
1.6
1.3
1.0
0.7
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
V_GS=0V
10¹
10⁰
10^-1
0.4
0.6
0.8
1.0
1.2
1.4
-VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current