CEM4435A_10 Datasheet, PDF (1/4 Pages) Chino-Excel Technology – P-Channel Enhancement Mode Field Effect Transistor

CEM4435A
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-30V, -8A, R_DS(ON) = 20mΩ @V_GS = -10V.
R_DS(ON) = 33mΩ @V_GS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
DD D D
8
7
6
5
SO-8
1
1
2
3
4
S SSG
ABSOLUTE MAXIMUM RATINGS T_A = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
V_DS
-30
V_GS
±20
Drain Current-Continuous
Drain Current-Pulsed ^a
I_D
-8
I_DM
-50
Maximum Power Dissipation
P_D
2.5
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient ^b
Symbol
RθJA
Limit
50
Units
V
V
A
A
W
C
Units
C/W
Specification and data are subject to change without notice .
Rev 2. 2010.July
http://www.cetsemi.com