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| CEM2539 Datasheet, PDF (2/7 Pages) Chino-Excel Technology – Dual Enhancement Mode Field Effect Transistor (N and P Channel) | |||
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CEM2539
N-Channel Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current
Gate Body Leakage Current
On Characteristics c
BVDSS
IDSS
IGSS
IGSS
VGS = 0V, ID = 250µA
20
VDS = 20V, VGS = 0V
VGS = ±12V, VDS = 0V
VGS = ±12V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics d
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA 0.5
VGS = 10V, ID = 6A
VGS = 4.5V, ID = 6A
VGS = 2.5V, ID = 5A
Forward Transconductance
Switching Characteristics d
gFS
VDS = 15V, ID = 6A
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 10V, ID = 1A,
VGS = 4.5V, RGEN = 6â¦
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 10V, ID = 5A,
VGS = 4.5V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
IS
Drain-Source Diode Forward Voltage c
VSD
VGS = 0V, IS = 1.5A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
Typ Max Units
V
1
µA
±10 µA
±10 µA
1.2
V
17
22 mâ¦
20
24 mâ¦
25
33 mâ¦
15
S
0.35 0.7 µs
0.87 1.8 µs
3.60 7.5 µs
2.01 4.3 µs
4.3 5.7 nC
1.1
nC
2.5
nC
1.5
A
1.2
V
2
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