CEM2539 Datasheet, PDF (1/7 Pages) Chino-Excel Technology – Dual Enhancement Mode Field Effect Transistor (N and P Channel)

CEM2539
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
FEATURES
20V, 7.5A, R_DS(ON) = 22mΩ @V_GS = 10V.
D1
D2
5
R_DS(ON) = 24mΩ @V_GS = 4.5V.
R_DS(ON) = 33mΩ @V_GS = 2.5V.
*1K
G1
G2
-20V, -4.0A, R_DS(ON) = 80mΩ @V_GS = -10V.
R_DS(ON) = 100mΩ @V_GS = -4.5V.
R_DS(ON) = 150mΩ @V_GS = -2.5V.
Super high dense cell design for extremely low RDS(ON).
S1
S2
D1 D1
D2
D2
8
7
6
5
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
SO-8
1
1
2
3
4
S1 G1
S2
G2
ABSOLUTE MAXIMUM RATINGS T_A = 25 C unless otherwise noted
Parameter
Symbol
N-Channel
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed ^a
V_DS
20
V_GS
±12
I_D
7.5
I_DM
25
P-Channel
-20
±12
-4.0
-15
Maximum Power Dissipation
P_D
2.0
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Units
V
V
A
A
W
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient ^b
Symbol
RθJA
Limit
62.5
Units
C/W
Details are subject to change without notice .
1
Rev 3. 2007.Sep.
http://www.cetsemi.com