CEF07N8 Datasheet, PDF (1/5 Pages) Chino-Excel Technology – N-Channel Logic Level Enhancement Mode Field Effect Transistor

CEF07N8
PRELIMINARY
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
800V , 4A , RDS(ON)=2 Ω @VGS=10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220F full-pak for through hole
G
D
6
G
D
S
S
TO-220F
ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
-Pulsed
IDM
Drain-Source Diode Forward Current
IS
Maximum Power Dissipation @Tc=25 C
Derate above 25 C
Operating and Storage Temperautre Range
PD
TJ, TSTG
Limit
800
Ć30
4
12
4
50
0.4
-55 to 150
Unit
V
V
A
A
A
W
W/ C
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
RįJC
2.5
C/W
Thermal Resistance, Junction-to-Ambient
RįJA
65
C/W
6-137