CP210 Datasheet, PDF (2/3 Pages) Central Semiconductor Corp – Small Signal Transistors N - Channel Silicon Amplifer J FET Chip

Central^TM
Semiconductor Corp.
PROCESS CP210
Typical Electrical Characteristics
16
T_A = 25°C
TYP. V_GS(OFF) = -5.0V
12
V_GS = 0V
-0.5V
-1.0V
8
-1.5V
-2.0V
-2.5V
4
-3.0V
-3.5V
0
-4.0V
0
4
8
12
16
20
V_DS, Drain-Source Voltage (V)
5
4.5 ^{TA = 25°C}
4 ^{TYP. VGS(OFF) = -5.0V}
-1.0V
-1.5V
3.5
3
V_GS = 0V
2.5
-0.5V
-2.0V
-2.5V
2
-3.0V
1.5
1
-3.5V
0.5
-4.0V
0
0
0.2
0.4
0.6
0.8
1
V_DS, Drain-Source Voltage (V)
1.6
T_A = 25°C
TYP. V_GS(OFF) = -1.2V
1.2
V_GS = 0V
-0.1V
0.8
-0.2V
0.4
0
0
-0.3V
-0.4V
-0.5V
-0.6V
4
8
12
16
20
V_DS, Drain-Source Voltage (V)
1.2
T_A = 25°C
1 ^{TYP. V}GS(OFF) ^{= -1.2V}
0.8
V_GS = 0V
-0.1V
0.6
0.4
0.2
0
0
-0.2V
-0.3V
-0.4V
-0.5V
-0.6V
0.4
0.8
1.2
1.6
2
V_DS, Drain-Source Voltage (V)
5
4
3
2
1
0
0.1
T_A = -55°C
T_A = 25°C
T_A = 125°C
V_DG = 15V
f = 1kHz
V_GS(OFF) = -5.0V
1
10
I_D, Drain Current (mA)
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R3 (9 -September 2003)