CMXT2207 Datasheet, PDF (2/2 Pages) Central Semiconductor Corp – SURFACE MOUNT SUPERmini DUAL COMPLEMENTARY SILICON TRANSISTOR

Central^TM
Semiconductor Corp.
CMXT2207
SURFACE MOUNT
SUPERmini™
DUAL COMPLEMENTARY
SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
NPN
PNP
SYMBOL TEST CONDITIONS
MIN MAX MIN MAX
Cob
VCB=10V, IE=0, f=1.0MHz
8.0
8.0
Cib
VEB=0.5V, IC=0, f=1.0MHz
25
Cib
VEB=2.0V, IC=0, f=1.0MHz
30
hie
VCE=10V, IC=1.0mA, f=1.0kHz
2.0
8.0
hie
VCE=10V, IC=10mA, f=1.0kHz
0.25 1.25
hre
VCE=10V, IC=1.0mA, f=1.0kHz
8.0
hre
VCE=10V, IC=10mA, f=1.0kHz
4.0
hfe
VCE=10V, IC=1.0mA, f=1.0kHz
50
300
hfe
VCE=10V, IC=10mA, f=1.0kHz
75
375
hoe
VCE=10V, IC=1.0mA, f=1.0kHz
5.0
35
hoe
VCE=10V, IC=10mA, f=1.0kHz
25
200
rb’Cc
VCB=10V, IE=20mA, f=31.8MHz
150
NF
VCE=10V, IC=100mA, RS=1.0kΩ, f=1.0kHz
4.0
ton
VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA
45
td
VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA
10
10
tr
VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA
25
40
toff
VCC=6.0V, IC=150mA, IB1=IB2=15mA
100
ts
VCC=30V, IC=150mA, IB1=IB2=15mA
225
ts
VCC=6.0V, IC=150mA, IB1=IB2=15mA
80
tf
VCC=30V, IC=150mA, IB1=IB2=15mA
60
tf
VCC=6.0V, IC=150mA, IB1=IB2=15mA
30
UNITS
pF
pF
pF
kΩ
kΩ
x10-4
x10-4
µmhos
µmhos
ps
dB
ns
ns
ns
ns
ns
ns
ns
ns
SOT-26 CASE - MECHANICAL OUTLINE
6
5
4
Q2
Q1
1
2
3
LEAD CODE:
1) EMITTER Q1
2) BASE Q1
3) COLLECTOR Q2
4) EMITTER Q2
5) BASE Q2
6) COLLECTOR Q1
MARKING CODE: X07
R2 (06-August 2003)