CMXT2207 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT SUPERmini DUAL COMPLEMENTARY SILICON TRANSISTOR

CMXT2207
SURFACE MOUNT
SUPERmini™
DUAL COMPLEMENTARY
SILICON TRANSISTOR
Central^TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMXT2207 type is
a dual complementary silicon transistor manufactured
by the epitaxial planar process, epoxy molded in a
SUPERmini™ surface mount package, designed for
small signal general purpose and switching applications.
MARKING CODE: X07
SOT-26 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ,Tstg
Θ_JA
NPN
75
40
6.0
600
350
-65 to +150
357
PNP
60
60
5.0
UNITS
V
V
V
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR:
SYMBOL
ICBO
ICBO
ICBO
ICBO
IEBO
ICEV
ICEV
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
hFE
hFE
fT
fT
TEST CONDITIONS
VCB=60V
VCB=50V
VCB=60V, TA=125°C
VCB=50V, TA=125°C
VEB=3.0V
VCE=60V, VEB=3.0V
VCE=30V, VBE=0.5V
IC=10µA
IC=10mA
IE=10µA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=10V, IC=0.1mA
VCE=10V, IC=1.0mA
VCE=10V, IC=10mA
VCE=10V, IC=150mA
VCE=1.0V, IC=150mA
VCE=10V, IC=500mA
VCE=20V, IC=20mA, f=100MHz
VCE=20V, IC=50mA, f=100MHz
(TA=25°C unless otherwise noted)
NPN
PNP
MIN MAX
MIN MAX
10
10
10
10
10
10
50
75
60
40
60
6.0
5.0
0.3
0.4
1.0
1.6
0.6
1.2
1.3
2.0
2.6
35
75
50
100
75
100
100 300
100 300
50
40
50
300
200
UNITS
nA
nA
µA
µA
nA
nA
nA
V
V
V
V
V
V
V
MHz
MHz
R2 (06-August 2003)