CMLM0605_10 Datasheet, PDF (2/2 Pages) Central Semiconductor Corp – SURFACE MOUNT LOW VCE(SAT) SILICON PNP TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE

CMLM0605
MULTI DISCRETE MODULE^™
SURFACE MOUNT
LOW VCE(SAT) SILICON PNP TRANSISTOR
AND
LOW VF SILICON SCHOTTKY DIODE
ELECTRICAL CHARACTERISTICS - Q1 - Continued:
SYMBOL TEST CONDITIONS
MIN
hfe
VCE=10V, IC=1.0mA, f=1.0kHz
100
hoe
VCE=10V, IC=1.0mA, f=1.0kHz
1.0
NF
VCE=5.0V, IC=100μA, RS=1.0KΩ,
f=10Hz to 15.7kHz
td
VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA
tr
VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA
ts
VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
tf
VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
MAX
400
60
4.0
35
35
200
50
ELECTRICAL CHARACTERISTICS - D1: (TA=25°C)
IR
VR=10V
20
IR
VR=30V
100
BVR
IR=500μA
40
VF
IF=100μA
0.13
VF
IF=1.0mA
0.21
VF
IF=10mA
0.27
VF
IF=100mA
0.35
VF
IF=500mA
0.47
CT
VR=1.0V, f=1.0MHz
50
SOT-563 CASE - MECHANICAL OUTLINE
UNITS
μS
dB
ns
ns
ns
ns
μA
μA
V
V
V
V
V
V
pF
w w w. c e n t r a l s e m i . c o m
LEAD CODE:
1) Emitter Q1
2) Base Q1
3) Cathode D1
4) Anode D1
5) Anode D1
6) Collector Q1
MARKING CODE: C65
R2 (18-January 2010)