CMLM0605_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT LOW VCE(SAT) SILICON PNP TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE

CMLM0605
MULTI DISCRETE MODULE^™
SURFACE MOUNT
LOW VCE(SAT) SILICON PNP TRANSISTOR
AND
LOW VF SILICON SCHOTTKY DIODE
SOT-563 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLM0605 is a
single PNP Transistor and Schottky Diode packaged
in a space saving SOT-563 case is designed for small
signal general purpose applications where size and
operational efficiency are prime requirements.
• Complementary Device: CMLM0405
• Combination Low VCE(SAT) Transistor and
Low VF Schottky Diode.
MARKING CODE: C65
MAXIMUM RATINGS - CASE: (TA=25°C)
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
MAXIMUM RATINGS - Q1: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
MAXIMUM RATINGS - D1: (TA=25°C)
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current, tp≤1.0ms
Peak Forward Surge Current, tp = 8.0ms
SYMBOL
PD
TJ, Tstg
Θ_JA
SYMBOL
VCBO
VCEO
VEBO
IC
SYMBOL
VRRM
IF
IFRM
IFSM
350
-65 to +150
357
60
40
6.0
200
40
500
3.5
10
UNITS
mW
°C
°C/W
UNITS
V
V
V
mA
UNITS
V
mA
A
A
ELECTRICAL CHARACTERISTICS - Q1: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
ICEV
VCE=30V, VEB=3.0V
BVCBO
IC=10μA
60
96
BVCEO
IC=1.0mA
40
63
BVEBO
IE=10μA
6.0
8.0
VCE(SAT) IC=10mA, IB=1.0mA
0.050
VCE(SAT) IC=50mA, IB=5.0mA
0.100
VBE(SAT) IC=10mA, IB=1.0mA
0.65
0.75
VBE(SAT) IC=50mA, IB=5.0mA
-
0.85
hFE
VCE=1.0V, IC=0.1mA
90
130
hFE
VCE=1.0V, IC=1.0mA
100
140
hFE
VCE=1.0V, IC=10mA
100
150
hFE
VCE=1.0V, IC=50mA
70
130
hFE
VCE=1.0V, IC=100mA
30
90
fT
VCE=20V, IC=10mA, f=100MHz
300
Cob
VCB=5.0V, IE=0, f=1.0MHz
Cib
VBE=0.5V, IC=0, f=1.0MHz
hie
VCE=10V, IC=1.0mA, f=1.0kHz
hre
VCE=10V, IC=1.0mA, f=1.0kHz
MAX
50
0.100
0.200
0.85
0.95
300
4.0
8.0
12
10
UNITS
nA
V
V
V
V
V
V
V
MHz
pF
pF
kΩ
X10^-4
R2 (18-January 2010)