CMLDM3757 Datasheet, PDF (2/2 Pages) Central Semiconductor Corp – SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS

CMLDM3757
SURFACE MOUNT
N-CHANNEL AND P-CHANNEL
ENHANCEMENT-MODE
COMPLEMENTARY MOSFETS
ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C)
SYMBOL TEST CONDITIONS
QG(TOT) VDS=10V, VGS=4.5V, ID=500mA
QG(TOT) VDS=10V, VGS=4.5V, ID=200mA
QGS
VDS=10V, VGS=4.5V, ID=500mA
QGS
VDS=10V, VGS=4.5V, ID=200mA
QGD
VDS=10V, VGS=4.5V, ID=500mA
QGD
VDS=10V, VGS=4.5V, ID=200mA
Crss
VDS=16V, VGS=0, f=1.0MHz
Ciss
VDS=16V, VGS=0, f=1.0MHz
Coss
VDS=16V, VGS=0, f=1.0MHz
ton
VDD=10V, VGS=4.5V, ID=540mA, RG=10Ω
toff
VDD=10V, VGS=4.5V, ID=540mA, RG=10Ω
ton
VDD=10V, VGS=4.5V, ID=215mA, RG=10Ω
toff
VDD=10V, VGS=4.5V, ID=215mA, RG=10Ω
N-CH (Q1)
TYP MAX
1.58 -
-
-
0.17 -
-
-
0.24 -
-
-
-
20
- 150
-
25
10
-
25
-
-
-
-
-
SOT-563 - MECHANICAL OUTLINE
P-CH (Q2)
TYP MAX
-
-
1.2 -
-
-
0.24 -
-
-
0.36 -
-
20
- 175
-
30
-
-
-
-
22
-
55
-
UNITS
nC
nC
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
PIN CONFIGURATION
w w w. c e n t r a l s e m i . c o m
LEAD CODE:
1) SOURCE Q1
2) GATE Q1
3) DRAIN Q2
4) SOURCE Q2
5) GATE Q2
6) DRAIN Q1
MARKING CODE: 3C7
R1 (22-September 2010)