CMLDM3757 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS

CMLDM3757
SURFACE MOUNT
N-CHANNEL AND P-CHANNEL
ENHANCEMENT-MODE
COMPLEMENTARY MOSFETS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLDM3757
consists of complementary N-Channel and P-Channel
Enhancement-mode silicon MOSFETs designed for
high speed pulsed amplifier and driver applications.
These MOSFETs offer Very Low rDS(ON) and Low
Threshold Voltage.
MARKING CODE: 3C7
SOT-563 CASE
• Device is Halogen Free by design
APPLICATIONS:
• Load/Power Switches
• Power Supply Converter Circuits
• Battery Powered Portable Devices
FEATURES:
• ESD Protection up to 2kV
• 350mW Power Dissipation
• Very Low rDS(ON)
• Low Threshold Voltage
• Logic Level Compatible
• Small, SOT-563 Surface Mount Package
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Maximum Pulsed Drain Current (tp=10μs)
Power Dissipation (Note 1)
Power Dissipation (Note 2)
Power Dissipation (Note 3)
Operating and Storage Junction Temperature
Thermal Resistance (Note 1)
SYMBOL N-CH (Q1)
P-CH (Q2)
VDS
20
VGS
8.0
ID
540
430
IDM
1500
750
PD
350
PD
300
PD
150
TJ, Tstg
-65 to +150
Θ_JA
357
UNITS
V
V
mA
mA
mW
mW
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C)
SYMBOL
TEST CONDITIONS
N-CH (Q1)
MIN MAX
P-CH (Q2)
MIN MAX
UNITS
IGSSF, IGSSR
IDSS
BVDSS
VGS(th)
VSD
rDS(ON)
rDS(ON)
rDS(ON)
rDS(ON)
rDS(ON)
rDS(ON)
VGS=4.5V, VDS=0
VDS=16V, VGS=0
VGS=0, ID=250μA
VDS=VGS, ID=250μA
VGS=0, IS=350mA
VGS=4.5V, ID=540mA
VGS=4.5V, ID=430mA
VGS=2.5V, ID=500mA
VGS=2.5V, ID=300mA
VGS=1.8V, ID=350mA
VGS=1.8V, ID=150mA
-
5.0
-
2.0
μA
-
1.0
-
1.0
μA
20
-
20
-
V
0.45
1.0
0.45
1.0
V
-
1.2
-
1.2
V
-
0.55
-
-
Ω
-
-
-
0.9
Ω
-
0.7
-
-
Ω
-
-
-
1.2
Ω
-
0.9
-
-
Ω
-
-
-
2.0
Ω
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm²
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm²
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm²
R1 (22-September 2010)