CMLDM3737 Datasheet, PDF (2/2 Pages) Central Semiconductor Corp – SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS

CMLDM3737
SURFACE MOUNT
DUAL N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFETS
ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued: (TA=25°C)
SYMBOL TEST CONDITIONS
TYP
MAX
Crss
VDS=16V, VGS=0, f=1.0MHz
20
Ciss
VDS=16V, VGS=0, f=1.0MHz
150
Coss
VDS=16V, VGS=0, f=1.0MHz
25
ton
VDD=10V, VGS=4.5V, ID=540mA, RG=10Ω
10
toff
VDD=10V, VGS=4.5V, ID=540mA, RG=10Ω
25
SOT-563 CASE - MECHANICAL OUTLINE
UNITS
pF
pF
pF
ns
ns
PIN CONFIGURATION
w w w. c e n t r a l s e m i . c o m
LEAD CODE:
1) Source Q1
2) Gate Q1
3) Drain Q2
4) Source Q2
5) Gate Q2
6) Drain Q1
MARKING CODE: 7C3
R1 (28-October 2010)