CMLDM3737 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS

CMLDM3737
SURFACE MOUNT
DUAL N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFETS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLDM3737
consists of Dual N-Channel Enhancement-mode silicon
MOSFETs designed for high speed pulsed amplifier
and driver applications. These MOSFETs offer Very
Low rDS(ON) and Low Threshold Voltage.
MARKING CODE: 7C3
SOT-563 CASE
APPLICATIONS:
• Load Switch / Level Shifting
• Battery Charging
• Boost Switch
• Electro-luminescent Backlighting
FEATURES:
• ESD Protection up to 2kV
• 350mW Power Dissipation
• Very Low rDS(ON)
• Low Threshold Voltage
• Logic Level Compatible
• Small, SOT-563 Surface Mount Package
• Complementary Dual P-Channel Device: CMLDM5757
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Maximum Pulsed Drain Current (tp=10μs)
Power Dissipation (Note 1)
Power Dissipation (Note 2)
Power Dissipation (Note 3)
Operating and Storage Junction Temperature
Thermal Resistance (Note 1)
SYMBOL
VDS
VGS
ID
IDM
PD
PD
PD
TJ, Tstg
Θ_JA
20
8.0
540
1.5
350
300
150
-65 to +150
357
UNITS
V
V
mA
A
mW
mW
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C)
SYMBOL
TEST CONDITIONS
MIN
TYP
IGSSF, IGSSR VGS=4.5V, VDS=0
IDSS
VDS=16V, VGS=0
BVDSS
VGS=0, ID=250μA
20
VGS(th)
VDS=VGS, ID=250μA
0.45
VSD
VGS=0, IS=350mA
rDS(ON)
VGS=4.5V, ID=540mA
rDS(ON)
VGS=2.5V, ID=500mA
rDS(ON)
VGS=1.8V, ID=350mA
Qg(tot)
VDS=10V, VGS=4.5V, ID=500mA
1.58
Qgs
VDS=10V, VGS=4.5V, ID=500mA
0.17
Qgd
VDS=10V, VGS=4.5V, ID=500mA
0.24
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm²
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm²
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm²
MAX
5.0
1.0
1.0
1.2
0.55
0.7
0.9
UNITS
μA
μA
V
V
V
Ω
Ω
Ω
nC
nC
nC
R1 (28-October 2010)