2N3762_15 Datasheet, PDF (2/2 Pages) Central Semiconductor Corp – PNP SILICON TRANSISTOR

2N3762 / 2N3763
PNP SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS (Continued)
SYMBOL
TEST CONDITIONS
hFE
VCE=1.0V, IC=10mA
hFE
VCE=1.0V, IC=150mA
hFE
VCE=1.0V, IC=500mA
hFE
VCE=1.5V, IC=1.0A
hFE
VCE=5.0V, IC=1.5A
|hfe|
VCE=10V, IC=50mA, f=100MHz
Cob
VCB=10V, IE=0, f=100kHz
Cib
VBE=0.5V, IC=0, f=100kHz
td
VCC=30V, VBE(off)=2.0V, IC=1.0A, IB1=100mA
tr
VCC=30V, VBE(off)=2.0V, IC=1.0A, IB1=100mA
ts
VCC=30V, IC=1.0A, IB1=-IB2=100mA
tf
VCC=30V, IC=1.0A, IB1=-IB2=100mA
Q_τ
VCC=30V, IC=1.0A, IB=100mA
2N3762
MIN MAX
35
40
35
20
80
20
1.8
15
80
8.0
3.5
80
35
30
2N3763
MIN MAX
35
40
35
30 120
30
1.5
15
80
8.0
3.5
80
35
30
UNITS
pF
pF
ns
ns
ns
ns
pC
JEDEC TO-39 PACKAGE - MECHANICAL OUTLINE
A
B
D
C
E
LEAD #2
LEAD #1
45°
I
F
G
H
LEAD #3
J
R1
SYMBOL
A (DIA)
B (DIA)
C
D
E
F (DIA)
G (DIA)
H
I
J
DIMENSIONS
INCHES MILLIMETERS
MIN MAX MIN MAX
0.335 0.370 8.51 9.40
0.315 0.335 8.00 8.51
- 0.040 -
1.02
0.240 0.260 6.10 6.60
0.500 - 12.70 -
0.016 0.021 0.41 0.53
0.200
5.08
0.100
2.54
0.028 0.034 0.71 0.86
0.029 0.045 0.74 1.14
TO-39 (REV: R1)
LEAD CODE:
1. Emitter
2. Base
3. Collector