2N3762_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – PNP SILICON TRANSISTOR

DATA SHEET
2N3762
2N3763
PNP SILICON TRANSISTOR
JEDEC TO-39 CASE
DESCRIPTION
The CENTRAL SEMICONDUCTOR 2N3762 and 2N3763 types are Silicon PNP Epitaxial Planar Transistors designed
for core driver applications.
MAXIMUM RATINGS (TA=25°C)
SYMBOL
2N3762
2N3763
UNITS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage
Junction Temperature
Thermal Resistance
Thermal Resistance
VCBO
VCEO
VEBO
IC
PD
PD
TJ,Tstg
Θ_JA
Θ_JC
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
40
60
40
50
5.0
1.5
1.0
4.0
-65 to +200
175
44
V
V
V
A
W
W
°C
°C/W
°C/W
SYMBOL
TEST CONDITIONS
2N3762
MIN MAX
2N3763
MIN MAX
UNITS
IBL
ICEV
ICEV
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
VBE(SAT)
VBE(SAT)
VCE=½Rated VCBO, VEB=2.0V
VCE=½Rated VCBO, VEB=2.0V
VCB=½Rated VCBO, VEB=2.0V. TA=100°C
IC=10µA
IC=10mA
IE=10µA
IC=10mA, IB=1.0mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=1.0A, IB=100mA
IC=10mA, IB=1.0mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=1.0A, IB=100mA
200
100
10
40
40
5.0
0.10
0.22
0.50
0.90
0.80
1.00
1.20
0.90 1.40
200
nA
100
nA
10
µA
60
V
50
V
5.0
V
0.10
V
0.22
V
0.50
V
0.90
V
0.80
V
1.00
V
1.20
V
0.90 1.40
V
(CONTINUED ON REVERSE SIDE)
R1