CPD31X Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – 10A, 60V Schottky Rectifi er Die

Product Brief
CPD31X
CPD34X
10A, 60V
Schottky Rectifier Die
CPD31X
CPD34X
Die Size
Die Thickness
Die Passivation
Anode Bonding Pad Area
Top Side Metalization (CPD31X)
Top Side Metalization (CPD34X)
Back Side Metalization
Scribe Alley Width
Wafer Diameter
Gross Die Per Wafer
85 MILS x 85 MILS
5.9 MILS ±0.8 MILS
SiN
78 MILS x 78 MILS
Al/Ni/Au - 30,000Å/4,000Å/1,500Å
Al - 30,000Å
Ti/Ni/Au - 1,600Å/5,550Å/1,500Å
3.15 MILS
5 INCHES
2,260
Features:
• Low forward voltage at 10 Amps forward current
• Low reverse leakage current
• Low profile geometry
• Metalization suitable for standard die attached technologies
• Top metalization optimized for solder process (CPD31X)
• Top metalization optimized for wire bonding (CPD34X)
Applications:
• Optimized for use as a by-pass rectifier in low profile
solar (PV) panels
• Reverse polarity protection
• OR-ing diode
Benefits:
• Energy efficiency
• High temperature characterization
• Space savings
Literature
Typical Electrical Characteristics
Samples
To order samples contact:
Central’s Sales department
631-435-1110
To order the latest Chip databook, visit:
web.centralsemi.com/search/sample.php
VRRM
(V)
MAX
60
Maximum Ratings (TA = 25˚C)
VR
IO
IFSM
TJ, Tstg
BVR
Electrical Characteristics (TA = 25˚C unless otherwise noted)
VF
@ IF
IR
@ VR
(V)
(A)
(A)
(˚C)
(V)
(V)
(V)
(A)
(V)
MAX
MAX
MAX
MAX
MIN
TYP
MAX
TYP
MAX
MAX
60
10
250
-65 to +150
60
0.49
–
0.59
0.67
5.0
75μA
500μA
60
10
–
*50mA
*60
*TA=100˚C
145 Adams Avenue _• Hauppauge _• New York _• 11788 _• USA _• www.centralsemi.com