CMLDM8120 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

CMLDM8120
CMLDM8120G*
SURFACE MOUNT
P-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
SOT-563 CASE
* Device is Halogen Free by design
APPLICATIONS:
• Load/Power Switches
• Power Supply Converter Circuits
• Battery Powered Portable Equipment
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Continuous Drain Current, t≤5.0s
Continuous Source Current (Body Diode)
Maximum Pulsed Drain Current, tp=10μs
Maximum Pulsed Source Current, tp=10μs
Power Dissipation (Note 1)
Power Dissipation (Note 2)
Power Dissipation (Note 3)
Operating and Storage Junction Temperature
Thermal Resistance
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
These CENTRAL SEMICONDUCTOR devices
are Enhancement-mode P-Channel Field Effect
Transistors, manufactured by the P-Channel DMOS
Process, designed for high speed pulsed amplifier and
driver applications. This MOSFET offers Low rDS(on)
and Low Theshold Voltage.
MARKING CODES:
CMLDM8120: C81
CMLDM8120G*: C8G
FEATURES:
• Low rDS(on)
• Low Threshold Voltage
• Logic Level Compatible
• Small SOT-563 package
SYMBOL
VDS
VGS
ID
ID
IS
IDM
ISM
PD
PD
PD
TJ, Tstg
Θ_JA
20
8.0
860
950
360
4.0
4.0
350
300
150
-65 to +150
357
UNITS
V
V
mA
mA
mA
A
A
mW
mW
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
IGSSF, IGSSR
IDSS
BVDSS
VGS(th)
VSD
rDS(ON)
rDS(ON)
rDS(ON)
rDS(ON)
VGS=8.0V, VDS=0
VDS=20V, VGS=0
VGS=0, ID=250μA
VDS=VGS, ID=250μA
VGS=0V, IS=360mA
VGS=4.5V, ID=0.95A
VGS=4.5V, ID=0.77A
VGS=2.5V, ID=0.67A
VGS=1.8V, ID=0.2A
1.0
5.0
20
24
0.45
0.76
0.085
0.085
0.13
0.19
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm²
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm²
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm²
MAX
50
500
1.0
0.9
0.15
0.142
0.20
0.24
UNITS
nA
nA
V
V
V
Ω
Ω
Ω
Ω
R3 (18-January 2010)