CMLDM7002A_15 Datasheet, PDF (1/4 Pages) Central Semiconductor Corp – SURFACE MOUNT SILICON DUAL N-CHANNEL ENHANCEMENT-MODE MOSFETS

CMLDM7002A
CMLDM7002AG*
CMLDM7002AJ
SURFACE MOUNT SILICON
DUAL N-CHANNEL
ENHANCEMENT-MODE
MOSFETS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
These CENTRAL SEMICONDUCTOR devices are
dual N-Channel enhancement-mode MOSFETs,
manufactured by the N-Channel DMOS Process,
designed for high speed pulsed amplifier and driver
applications. The CMLDM7002A utilizes the USA
pinout configuration, while the CMLDM7002AJ utilizes
the Japanese pinout configuration. These devices offer
low rDS _(ON) and low VDS(ON).
SOT-563 CASE
* Device is Halogen Free by design
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Body Diode)
Maximum Pulsed Drain Current
Maximum Pulsed Source Current
Power Dissipation (Note 1)
Power Dissipation (Note 2)
Power Dissipation (Note 3)
Operating and Storage Junction Temperature
Thermal Resistance
MARKING CODES: CMLDM7002A: L02
CMLDM7002AG*: C2G
CMLDM7002AJ: 02J
SYMBOL
VDS
VDG
VGS
ID
IS
IDM
ISM
PD
PD
PD
TJ, Tstg
Θ_JA
60
60
40
280
280
1.5
1.5
350
300
150
-65 to +150
357
UNITS
V
V
V
mA
mA
A
A
mW
mW
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
IGSSF, IGSSR VGS=20V, VDS=0
100
IDSS
VDS=60V, VGS=0
1.0
IDSS
VDS=60V, VGS=0, TJ=125°C
500
ID(ON)
VGS=10V, VDS=10V
500
BVDSS
VGS=0, ID=10μA
60
VGS(th)
VDS=VGS, ID=250μA
1.0
2.5
VDS(ON)
VGS=10V, ID=500mA
1.0
VDS(ON)
VGS=5.0V, ID=50mA
0.15
VSD
VGS=0, IS=400mA
1.2
rDS(ON)
VGS=10V, ID=500mA
2.0
rDS(ON)
VGS=10V, ID=500mA, TJ=125°C
3.5
rDS(ON)
VGS=5.0V, ID=50mA
3.0
rDS(ON)
VGS=5.0V, ID=50mA, TJ=125°C
5.0
gFS
VDS=10V, ID=200mA
80
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm²
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm²
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm²
UNITS
nA
μA
μA
mA
V
V
V
V
V
Ω
Ω
Ω
Ω
mS
R8 (8-June 2015)