CMLDM7002A Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT PICOmini DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

CMLDM7002A
CMLDM7002AJ
SURFACE MOUNT PICOmini^TM
DUAL N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
SOT-563 CASE
MAXIMUM RATINGS (TA=25°C)
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Body Diode)
Maximum Pulsed Drain Current
Maximum Pulsed Source Current
Power Dissipation
Power Dissipation
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
Central^TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLDM7002A
and CMLDM7002AJ are special dual versions of the
2N7002 Enhancement-mode N-Channel Field Effect
Transistor, manufactured by the N-Channel DMOS
Process, designed for high speed pulsed amplifier and
driver applications. The CMLDM7002A utilizes the USA
pinout configuration, while the CMLDM7002AJ utilizes the
Japanese pinout configuration. These special Dual
Transistor devices offer low rDS(ON) and low VDS _(ON).
MARKING CODE: CMLDM7002A: L02
CMLDM7002AJ: 02J
SYMBOL
VDS
VDG
VGS
ID
IS
IDM
ISM
PD
PD
PD
UNITS
60
V
60
V
40
V
280
mA
280
mA
1.5
A
1.5
A
350
mW (Note 1)
300
mW (Note 2)
150
mW (Note 3)
TJ,Tstg
Θ_JA
-65 to +150
357
°C
°C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR
SYMBOL
TEST CONDITIONS
IGSSF
IGSSR
IDSS
IDSS
ID(ON)
BVDSS
VGS(th)
VDS(ON)
VDS(ON)
rDS(ON)
rDS(ON)
rDS(ON)
rDS(ON)
gFS
VGS=20V, VDS=0V
VGS=20V, VDS=0V
VDS=60V, VGS=0V
VDS=60V, VGS=0V, Tj=125°C
VGS=10V, VDS ≥ 2VDS(ON)
VGS=0V, ID=10µA
VDS=VGS, ID=250µA
VGS=10V, ID=500mA
VGS=5.0V, ID=50mA
VGS=10V, ID=500mA
VGS=10V, ID=500mA, Tj=125°C
VGS=5.0V, ID=50mA
VGS=5.0V, ID=50mA, Tj=125°C
VDS ≥ 2VDS(ON), ID=200mA
(TA=25°C unless otherwise noted)
MIN
MAX
100
100
1.0
500
500
60
1.0
2.5
1.0
0.15
2.0
3.5
3.0
5.0
80
UNITS
nA
nA
µA
µA
mA
V
V
V
V
Ω
Ω
Ω
Ω
mmhos
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0 mm²
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0 mm²
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4 mm²
R3 (19-December 2003)