NE856M02 Datasheet, PDF (7/8 Pages) NEC – NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER

TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = 25°C)
NE856M02
j25
j10
0
-j10
-j25
j50
j100
S11
3 GHz
S11
0.1 GHz
S22
3 GHz
-j50
S22
0.1 GHz
-j100
90˚
135˚
S21
0.1 GHz
180˚
S21
3 GHz
S12
0.1 GHz
45˚
S12
3 GHz
0˚
Coordinates in Ohms
Frequency in GHz
225˚
VCE = 10 V, IC = 50 mA
270˚
315˚
NE856M02
VCE = 10 V, IC = 50 mA
FREQUENCY
(GHz)
0.100
0.200
0.400
0.600
0.800
1.000
1.200
1.400
1.600
1.800
2.000
2.200
2.400
2.600
2.800
3.000
S11
MAG
ANG
0.388
0.380
0.377
0.378
0.379
0.380
0.381
0.382
0.381
0.382
0.383
0.383
0.385
0.386
0.389
0.392
-113.0
-147.3
-172.1
175.4
166.1
158.2
151.2
144.7
138.5
132.5
126.8
121.0
115.6
110.2
104.8
99.5
S21
MAG
ANG
35.396
20.013
10.398
6.989
5.262
4.218
3.521
3.023
2.650
2.362
2.132
1.943
1.789
1.657
1.547
1.450
119.8
102.2
88.1
79.6
72.7
66.5
60.7
55.3
50.1
45.1
40.2
35.6
31.2
27.0
22.9
19.0
S12
MAG
ANG
0.015 64.1
0.023 66.1
0.040 70.5
0.057 71.3
0.075 71.0
0.092 69.4
0.109 67.8
0.125 65.9
0.141 64.0
0.157 62.0
0.173 59.9
0.188 57.7
0.203 55.6
0.218 53.6
0.232 51.3
0.246 49.3
S22
MAG
ANG
0.569
0.399
0.325
0.316
0.324
0.337
0.354
0.373
0.393
0.412
0.432
0.451
0.468
0.485
0.500
0.513
-38.2
-40.5
-41.0
-44.8
-50.2
-55.9
-61.1
-66.2
-70.7
-74.9
-78.6
-82.1
-85.3
-88.3
-91.2
-94.0
K
MAG
(dB)
0.60
33.7
0.85
29.4
1.00
23.7
1.05
19.5
1.06
16.9
1.07
15.1
1.06
13.6
1.06
12.4
1.05
11.4
1.04
10.6
1.03
9.9
1.01
9.4
1.00
9.5
0.98
8.8
0.97
8.2
0.96
7.7
Note:
1. Gain Calculation:
( ). MAG = ^|S21| K ± K ² - 1 When K ≤ 1, MAG is undefined and MSG values are used. MSG = ^|S21| , K = ^{1 + | ∆ | 2 - |S11| 2 - |S22| 2} , ∆ = S11 S22 - S21 S12
|S12|
|S12|
2 |S12 S21|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • [phone] • Telex 34-6393 • FAX [phone]
DATA SUBJECT TO CHANGE WITHOUT NOTICE
Internet: http://WWW.CEL.COM
11/14/2001