NE856M02 Datasheet, PDF (6/8 Pages) NEC – NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER

NE856M02
TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = 25°C)
j50
j25
j100
90˚
135˚
45˚
j10
0
-j10
-j25
S11
3 GHz
S22
0.1 GHz
S22
3 GHz
S11
0.1 GHz
-j100
-j50
180˚
S21
0.1 GHz
S21
3 GHz
S12
S12
3 GHz
0˚
0.1 GHz
Coordinates in Ohms
Frequency in GHz
225˚
VCE = 10 V, IC = 20 mA
270˚
315˚
NE856M02
VCE = 10 V, IC = 20 mA
FREQUENCY
(GHz)
0.100
0.200
0.400
0.600
0.800
1.000
1.200
1.400
1.600
1.800
2.000
2.200
2.400
2.600
2.800
3.000
S11
MAG
ANG
0.508
0.425
0.384
0.376
0.374
0.374
0.375
0.375
0.375
0.376
0.377
0.378
0.380
0.382
0.385
0.388
-78.9
-120.5
-156.2
-173.7
174.4
164.9
156.8
149.5
142.7
136.2
130.1
123.9
118.2
112.6
107.0
101.4
S21
MAG
ANG
29.606
18.715
10.140
6.875
5.192
4.168
3.481
2.990
2.620
2.337
2.109
1.922
1.770
1.640
1.531
1.435
131.4
110.2
92.5
82.6
75.0
68.3
62.2
56.6
51.2
46.1
41.2
36.5
32.1
27.8
23.7
19.8
S12
MAG
ANG
0.019 57.0
0.029 57.5
0.043 62.1
0.058 64.6
0.074 65.4
0.090 65.3
0.106 64.5
0.122 63.4
0.137 61.9
0.153 60.3
0.168 58.6
0.183 56.8
0.198 54.8
0.213 53.2
0.227 51.1
0.242 49.1
S22
MAG
ANG
0.707
0.500
0.373
0.347
0.346
0.356
0.370
0.387
0.406
0.424
0.443
0.461
0.478
0.494
0.508
0.521
-34.0
-42.7
-45.9
-48.9
-53.4
-58.2
-63.0
-67.7
-71.9
-75.9
-79.4
-82.9
-85.9
-88.8
-91.7
-94.5
K
MAG
(dB)
0.43
32.0
0.65
28.1
0.91
23.7
1.01
20.0
1.05
17.1
1.07
15.0
1.07
13.5
1.07
12.3
1.06
11.3
1.05
10.4
1.04
9.7
1.03
9.2
1.01
8.9
0.99
8.9
0.98
8.3
0.97
7.7
Note:
1. Gain Calculation:
( ). MAG = ^|S21| K ± K ² - 1 When K ≤ 1, MAG is undefined and MSG values are used. MSG = ^|S21| , K = ^{1 + | ∆ | 2 - |S11| 2 - |S22| 2} , ∆ = S11 S22 - S21 S12
|S12|
|S12|
2 |S12 S21|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain